Chemical Vapor Deposition of Diamond on Si Substrate Treated by Using Fluidized Bed.

SnO2 coated Ni particles prepared by fluidized bed chemical vapor deposition

A Fluidized Bed Metal–Organic Chemical Vapor Deposition (FB-MOCVD) process was developed for the growth of tin oxide thin films on large hollow Ni particles. Tetraethyl tin was used as tin source and dry air both as fluidization gas and oxidant reagent. The SnO2 films were grown in a FBCVD reactor under reduced pressure (13.3 kPa) in the temperature range of 633–663 K. A series of specific expe...

Method for growing a diamond thin film on a substrate by plasma enhanced chemical vapor deposition

Chemical vapor deposition of m-plane and c-plane InN nanowires on Si (100) substrate

In this paper, synthesis of indium nitride (InN) nanowires (NWs) by chemical vapor deposition (CVD) is studied. InN NWs were synthesized via a vapor–liquid–solid (VLS) growth mechanism using high purity indium foil and ammonia as the source materials, and nitrogen as carrier gas. The mixture of nonpolar m-plane oriented and polar c-plane oriented tapered InN NWs is observed grown on top of Si (...

Chemical vapor deposition of HfO2 films on Si„100..

HfO2 films were grown on Si~100! by chemical vapor deposition as an attempt to develop an industrially straightforward gate dielectric deposition process. During deposition at ;400 °C the decomposition of the hafnium-tetra-tert-butoxide Hf(C4H9O)4 precursor provides sufficient oxygen to produce a stoichiometric HfO2 film. Medium energy ion scattering, high resolution transmission electron micro...

Phase-graded deposition of diamond-like carbon on nanotips by near-field induced chemical vapor deposition